MOS 30A 100V N管

DESCRIPTION
The JXP30N10G uses Super Trench 
technology that is uniquely optimized to provide the 
most efficient high frequency switching 
performance. Both conduction and switching power 
losses are minimized due to an extremely low 
combination of RDS(ON) and Qg. This device is ideal 
for high-frequency switching and synchronous 
rectification. 
GENERAL FEATURES
 ID =30A,VDS=100V
 RDS(ON)(Typ.)=17mΩ@VGS=10V
 RDS(ON)(Typ.)=22mΩ@VGS=4.5V
 Green Device Available
 Low Gate Charge
 Advanced High Cell Density Trench
Technology
 ** EAS Guaranteed
APPLICATION
 Power Management Switches
 DC/DC Converters
PACKAGE
 TO-252